| PART |
Description |
Maker |
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| AP28G45EM |
N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| AP30G120ASW |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics
|
| AP50GT60SW-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
| AP28G40GEO |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
| 3N50K-MK 3N50KG-TA3-T 3N50KG-TF1-T 3N50KG-TF2-T 3N |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
| PPNGZ52F120A PPNHZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
